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VISHAY
TSDF02830YR
Vishay Semiconductors
Dual - MOSMIC(R)- two AGC Amplifiers for TV-Tuner Prestage with 5 V Supply Voltage 654
Comments
MOSMIC - MOS Monolithic Integrated Circuit
VY CW
WM1
2 3
16980
1
Electrostatic sensitive device. Observe precautions for handling.
Features
* Easy Gate 1 switch-off with PNP switching transistors inside PLL * Two differently optimized amplifiers in a single package * Integrated gate protection diodes * Low noise figure, high gain * Typical forward transadmittance of 31 mS resp 28 mS * Partly internal self biasing-network on chip * Superior cross modulation at gain reduction * High AGC-range with soft slope * Main AGC control range from 3 V to 0.5 V * Supply voltage 5 V (3 V to 7 V) * SMD package, reverse pinning
Mechanical Data
Weight: 6 mg Case: SOT 363R V - Vishay Y - Year, is variable for digit from 0 to 9 (e.g. 0 = 2000, 1 = 2001) CW - Calendar Week, is variable for number from 01 to 52 Number of Calendar Week is always indicating place of pin 1 Pinning: 1 = Gate 1 (amplifier 1), 2 = Source, 3 = Drain (amplifier 1), 4 = Drain (amplifier 2), 5 = Gate 2, 6 = Gate 1 (amplifier 2)
Applications
Low noise gain controlled VHF and UHF input stages, such as in digital and analog TV tuners.
AGC C C VHF in +5 V RG1 D3 RFC +5 V C UHF in +5 V RG1 C UHF out 1 G1
AMP1
5
G2 (common)
RFC +5 V D4 C VHF out
6 G1
AMP2
S (common)
2
16979
Document Number 85164 Rev. 1, 25-Oct-02
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TSDF02830YR
Vishay Semiconductors Parts Table
Part TSDF02830YR WM1 Marking SOT363R Package
VISHAY
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified
Amplifier 1
Following data are valid for operating amplifier 1(pin 1, 3, 2, 5) which is optimized for UHF applications Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Gate 1 - source voltage Gate 2 - source voltage Total power dissipation Channel temperature Storage temperature range Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 m Cu Tamb 60 C Test condition Symbol VDS ID IG1/G2SM + VG1SM - VG1SM VG2SM Ptot TCh Tstg RthChA Value 8 25 10 6 1.5 6 200 150 - 55 to + 150 450 Unit V mA mA V V V mW C C K/W
Amplifier 2
Following data are valid for operating amplifier 2 (pin 6, 4, 2, 5) which is optimized for VHF applications Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Gate 1 - source voltage Gate 2 - source voltage Total power dissipation Channel temperature Storage temperature range Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 m Cu Tamb 60 C Test condition Symbol VDS ID IG1/G2SM + VG1SM - VG1SM VG2SM Ptot TCh Tstg RthChA Value 8 30 10 6 1.5 6 200 150 - 55 to + 150 450 Unit V mA mA V V V mW C C K/W
Electrical DC Characteristics
Tamb = 25 C, unless otherwise specified
Amplifier 1
Following data are valid for operating amplifier 1(pin 1, 3, 2, 5) which is optimized for UHF applications Parameter Drain - source breakdown voltage Test condition ID = 10 A, VG1S = VG2S = 0 Symbol V(BR)DSS + V(BR)G1SS V(BR)G2SS Min 12 7 7 10 10 Typ. Max Unit V V V
Gate 1 - source breakdown voltage + IG1S = 10 mA, VG2S = VDS = 0 Gate 2 - source breakdown voltage IG2S = 10 mA, VG1S = VDS = 0 Document Number 85164 Rev. 1, 25-Oct-02
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Parameter Gate 1 - source leakage current Gate 2 - source leakage current Drain - source operating current Gate 1 - source cut-off voltage Gate 2 - source cut-off voltage Test condition + VG1S = 5 V, VG2S = VDS = 0 VG2S = 5 V, VG1S = VDS = 0 VDS = VRG1 = 5 V, VG2S = 4 V, R G1 = 56 k VDS = 5 V, VG2S = 4, ID = 20 A VDS = VRG1 = 5 V, RG1 =100 k, ID = 20 A Symbol + IG1SS IG2SS IDSO VG1S(OFF) VG2S(OFF) 8 0.3 0.3 Min
TSDF02830YR
Vishay Semiconductors
Typ. Max 20 20 12 17 1.0 1.2 Unit nA nA mA V V
Amplifier 2
Following data are valid for operating amplifier 2 (pin 6, 4, 2, 5) which is optimized for VHF applications Parameter Drain - source breakdown voltage Test condition ID = 10 A, VG1S = VG2S = 0 Symbol V(BR)DSS + V(BR)G1SS V(BR)G2SS + IG1SS IG2SS IDSO VG1S(OFF) VG2S(OFF) 8 0.3 0.3 12 Min 12 7 7 10 10 20 20 17 1.0 1.2 Typ. Max Unit V V V nA nA mA V V
Gate 1 - source breakdown voltage + IG1S = 10 mA, VG2S = VDS = 0 Gate 2 - source breakdown voltage IG2S = 10 mA, VG1S = VDS = 0 Gate 1 - source leakage current Gate 2 - source leakage current Drain - source operating current Gate 1 - source cut-off voltage Gate 2 - source cut-off voltage + VG1S = 5 V, VG2S = VDS = 0 VG2S = 5 V, VG1S = VDS = 0 VDS = VRG1 = 5 V, VG2S = 4 V, R G1 = 56 k VDS = 5 V, VG2S = 4, ID = 20 A VDS = VRG1 = 5 V, RG1 = 56 k, ID = 20 A
Electrical AC Characteristics
Tamb = 25 C, unless otherwise specified
Amplifier 1
VDS = VRG1 = 5 V, VG2S = 4 V, RG1 = 100 k, ID = IDSO, f = 1 MHz, Tamb = 25 C, unless otherwise specified Following data are valid for operating amplifier 1(pin 1, 3, 2, 5) which is optimized for UHF applications Parameter Forward transadmittance Gate 1 input capacitance Feedback capacitance Output capacitance Power gain GS = 2 mS, BS = BSopt, GL = 0.5 mS, BL = BLopt, f = 200 MHz GS = 2 mS, BS = BSopt, GL = 1 mS, BL = BLopt, f = 400 MHz GS = 3.3 mS, BS = BSopt, GL = 1 mS, BL = BLopt, f = 800 MHz AGC range Noise figure VDS = 5 V, VG2S = 0.5 to 4 V, f = 200 MHz GS = GL = 20 mS, BS = BL = 0, f = 50 MHz GS = 2 mS, GL = 1 mS, BS = BSopt, f = 400 MHz GS = 3.3 mS, G L = 1 mS, BS = BSopt, f = 800 MHz Test condition Symbol |y21s | Cissg1 Crss Coss Gps Gps Gps Gps F F F Min 27 Typ. 31 1.9 20 0.9 33 30 25 50 6.0 1.0 1.3 8.0 1.5 2.0 Max 35 2.3 Unit mS pF fF pF dB dB dB dB dB dB dB
Document Number 85164 Rev. 1, 25-Oct-02
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TSDF02830YR
Vishay Semiconductors
Parameter Cross modulation Test condition Input level for k = 1 % @ 0 dB AGC fw = 50 MHz, funw = 60 MHz Input level for k = 1 % @ 40 dB AGC fw = 50 MHz, funw = 60 MHz Remark on improving intermodulation behavior: Symbol Xmod Xmod Min 90 100 105 Typ. Max
VISHAY
Unit dBV dBV
By setting R G1 smaller than 100 k, e.g. 68 k typical value of IDSO will raise and improved intermodulation behavior will be performed.
Amplifier 2
VDS = VRG1 = 5 V, VG2S = 4 V, RG1 = 56 k, ID = IDSO, f = 1 MHz, Tamb = 25 C, unless otherwise specified Following data are valid for operating amplifier 2 (pin 6, 4, 2, 5) which is optimized for VHF applications Parameter Forward transadmittance Gate 1 input capacitance Feedback capacitance Output capacitance Power gain GS = 2 mS, BS = BSopt, GL = 0.5 mS, BL = BLopt, f = 200 MHz GS = 2 mS, BS = BSopt, GL = 1 mS, B L = BLopt, f = 400 MHz GS = 3.3 mS, BS = BSopt, GL = 1 mS, B L = BLopt, f = 800 MHz AGC range Noise figure VDS = 5 V, VG2S = 0.5 to 4 V, f = 200 MHz GS = GL = 20 mS, BS = BL = 0, f = 50 MHz GS = 2 mS, G L = 1 mS, BS = BSopt, f = 400 MHz GS = 3.3 mS, GL = 1 mS, BS = BSopt, f = 800 MHz Cross modulation Input level for k = 1 % @ 0 dB AGC fw = 50 MHz, funw = 60 MHz Input level for k = 1 % @ 40 dB AGC fw = 50 MHz, funw = 60 MHz Remark on improving intermodulation behavior: By setting R G1 smaller than 56 k, typical value of IDSO will raise and improved intermodulation behavior will be performed. Test condition Symbol |y21s | Cissg1 Crss Coss Gps Gps Gps Gps F F F Xmod Xmod 90 105 Min 23 Typ. 28 2.5 20 0.9 32 28 22 50 4.5 1.0 1.5 6.0 1.6 2.3 Max 33 3.0 Unit mS pF fF pF dB dB dB dB dB dB dB dBV dBV
Document Number 85164 Rev. 1, 25-Oct-02
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VISHAY
Package Dimensions in mm
TSDF02830YR
Vishay Semiconductors
14280
Document Number 85164 Rev. 1, 25-Oct-02
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TSDF02830YR
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Seminconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85164 Rev. 1, 25-Oct-02
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